| 摘要 |
The present disclosure relates to a method of fabricating a silicon nanowire having a width of 100 nm or less, especially 50 nm or less, by depositing a metal film on a silicon-containing layer, treating the metal film using a wet process to produce an interconnected metal network having gaps on the silicon-containing layer, and etching the silicon-containing layer with a metal-assisted etching process to form a silicon nanowire having a width of 100 nm or less, especially 50 nm or less. The present disclosure also relates to lithium ion batteries, thermoelectric materials, solar cells, chemical and biological sensors, and drug delivery devices containing silicon nanowires |
