发明名称 |
Method for producing semiconductor substrate |
摘要 |
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer. |
申请公布号 |
EP2244286(B1) |
申请公布日期 |
2016.06.22 |
申请号 |
EP20100008251 |
申请日期 |
2007.04.30 |
申请人 |
SUMCO CORPORATION |
发明人 |
MURAKAMI, SATOSHI;MORIMOTO, NOBUYUKI;NISHIHATA, HIDEKI;ENDO, AKIHIKO |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|