| 摘要 |
The invention provides a method for reactive-ion etching a magnetic material with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound e.g. NH<SB>3</SB>, the method comprising exposing a multilayered film comprising a magnetic material thin film having thereon a resist film formed on a substrate to an electron beam and then developed, to form a pattern on the resist film, vacuum depositing a mask material, dissolving the resist to form a mask, and removing a part of the magnetic material thin film that is not covered with the mask by reactive ion etching with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, to form a pattern on the magnetic material thin film. |
