| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device, employing an oxide semiconductor, in which electric characteristics are stabilized and reliability is improved.SOLUTION: A method of manufacturing a semiconductor device employing an oxide semiconductor includes forming an oxide semiconductor film and then introducing oxygen into the oxide semiconductor film (first oxygen introduction processing), and forming an island-shaped oxide semiconductor layer by etching the oxide semiconductor film after the first oxygen introduction processing, and introducing oxygen at least to a side end portion of the island-shaped oxide semiconductor layer (second oxygen introduction processing). |
