DECREASING THE CRITICAL DIMENSIONS IN INTEGRATED CIRCUITS

摘要

A method (100) for lithographic patterning of a substrate is described. The method comprises obtaining a substrate to be patterned. It furthermore comprises subsequently applying at least twice the following cycle : applying a lithographical patterning process of a thermally shrinkable metal-oxide layer for forming a metal-oxide pattern, and thermally shrinking the metal-oxide pattern. The different metal oxide patterns formed during the at least two cycles are outlined relatively with respect to each other so that the shrunk metal-oxide patterns form together an overall pattern to be transferred to the substrate. After said applying at least twice the cycle, the overall pattern is transferred to the substrate.