| 发明名称 |
Organic Thin Film Transistor and Manufacturing Method Thereof, Array Substrate |
| 摘要 |
An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped. |
| 申请公布号 |
US2016172590(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514799739 |
申请日期 |
2015.07.15 |
| 申请人 |
BOE Technology Group Co., Ltd. |
发明人 |
Xie Yingtao;Ouyang Shihong;Cai Shucheng;Shi Qiang;Liu Ze;Fong Honhang |
| 分类号 |
H01L51/00;H01L51/05 |
主分类号 |
H01L51/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of an organic thin film transistor, comprising
forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, wherein, the sheltered region corresponds to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped. |
| 地址 |
Beijing CN |
