METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES

摘要

Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

主权项

1. A device, comprising:
a semiconductor substrate; a first semiconductor layer on the substrate; a second strained semiconductor layer on the first semiconductor layer; a finFET transistor on the substrate, the finFET transistor including:
a fin formed from the first semiconductor layer and the second semiconductor layer;a strained channel formed in the second semiconductor layer in the fin.