发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The present inventive concept relates to a semiconductor device, and more particularly to a semiconductor device that can increase the amount of current by reducing impedance, and a method of manufacturing the semiconductor device.;A semiconductor device comprises an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; an n+ region disposed on the n− type epitaxial layer; first and second trenches disposed in the n− type epitaxial layer and the n+ region; first and second gate insulating layers disposed inside the first and second trenches, respectively; first and second gate electrodes disposed on the first and second gate insulating layers, respectively; a p-type region disposed on two sides of one of the first and second trenches; an oxidation film diposed on the first and second gate electrodes; a source electrode disposed on the n+ region and the oxidation film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein a first channel is disposed on two sides of the first trench and a second channel is disposed on two sides of the second trench. |
申请公布号 |
US2016172483(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201514853459 |
申请日期 |
2015.09.14 |
申请人 |
HYUNDAI MOTOR COMPANY |
发明人 |
CHUN Dae Hwan;LEE Jong Seok;PARK Junghee;HONG Kyoung-Kook;JUNG Youngkyun |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; an n+ region disposed on the n− type epitaxial layer; first and second trenches disposed in the n− type epitaxial layer and the n+ region; first and second gate insulating layers disposed inside the first and second trenches, respectively; first and second gate electrodes disposed on the first and second gate insulating layers, respectively; a p-type region disposed on two sides of one of the first and second trenches; an oxidation film diposed on the first and second gate electrodes; a source electrode disposed on the n+ region and the oxidation film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein a first channel is disposed on two sides of the first trench and a second channel is disposed on two sides of the second trench. |
地址 |
Seoul KR |