发明名称 |
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE |
摘要 |
A semiconductor structure comprises a first layer. The first layer comprises a first III-V semiconductor material. The semiconductor structure also comprises a second layer over the first layer. The second layer comprises a second III-V semiconductor material different from the first III-V semiconductor material. The semiconductor structure further comprises an insulating layer over the second layer. The insulating layer is patterned to expose a portion of the first layer. The exposed portion of the first layer comprises electrons of the second layer. The semiconductor structure additionally comprises an intermetallic compound over the exposed portion of the first layer. |
申请公布号 |
US2016172475(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201615043277 |
申请日期 |
2016.02.12 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Po-Chih;Hsu Chun-Wei;Yang Fu-Chih;Yao Fu-Wei;Tsai Chun Lin;Yu Jiun-Lei Jerry |
分类号 |
H01L29/778;H01L29/205;H01L29/66;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsin-Chu TW |