| 发明名称 |
SHALLOW EXTENSION JUNCTION |
| 摘要 |
A method for fabricating a semiconductor device includes receiving a finned substrate comprising an isolation layer with a plurality of semiconductor fins formed thereon, forming a gate structure over a fin that comprises a gate and a seed layer disposed below the gate and immediately adjacent to the fin, and epitaxially growing a gate extender from the seed layer that laterally extends over a source or drain region of the fin. In one embodiment, a semiconductor device includes a finned substrate comprising an isolation layer with a plurality of semiconductor fins formed thereon, a gate structure formed over a fin of the plurality of fins, the gate structure comprising a gate and a seed layer disposed below the gate and immediately adjacent to the fin, and a gate extender epitaxially grown from the seed layer that laterally extends over a source or drain region of the fin. |
| 申请公布号 |
US2016172381(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201614995218 |
申请日期 |
2016.01.14 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Chan Kevin K.;Hashemi Pouya;Leobandung Effendi;Park Dae-Gyu;Yang Min |
| 分类号 |
H01L27/12;H01L29/49;H01L29/423;H01L29/16 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a finned substrate comprising an isolation layer with a plurality of fins formed thereon, the plurality of fins comprising a semiconductor material; a gate structure formed over a fin of the plurality of fins, the gate structure comprising a gate and a seed layer disposed below the gate and immediately adjacent to the fin; and a gate extender epitaxially grown from the seed layer that laterally extends over a source or drain region of the fin. |
| 地址 |
Armonk NY US |
