发明名称 MEMORY REPAIR REDUNDANCY
摘要 An integrated circuit including a memory, an array cache, and a cache replacement store is described. The memory includes a primary array and a redundant array. The integrated circuit also includes circuitry configured to transfer data into or out of the primary array using the array cache. For defective locations in the array cache, the circuitry is configured to use the cache replacement store in the transfer of data in place of the defective locations in the array cache, and map addresses in the primary array corresponding to the defective locations in the cache array to the redundant array.
申请公布号 US2016170853(A1) 申请公布日期 2016.06.16
申请号 US201414572166 申请日期 2014.12.16
申请人 Macronix International Co., Ltd. 发明人 Lo Chi;Hung Shuo-Nan;Hung Chun-Hsiung
分类号 G06F11/20;G11C29/00 主分类号 G06F11/20
代理机构 代理人
主权项 1. An integrated circuit comprising: a memory including a primary array and a redundant array; an array cache; and a cache replacement store; and circuitry configured to transfer data into or out of the primary array using the array cache, and for a defective location in the array cache, to use the cache replacement store in the transfer of the data in place of the defective location in the array cache.
地址 Hsinchu TW