METHOD FOR PRODUCING NANOIMPRINT MOLD

摘要

In the method, a sidewall pattern is formed in a side wall of a first resist pattern that is formed on a second hard mask layer of a base material in which first and second hard mask layers are laminated in the order of description, a second hard mask pattern is formed by etching the second hard mask layer by using the sidewall pattern as a mask, a first hard mask pattern is formed by etching the first hard mask layer by using, as a mask, the second hard mask pattern and a second resist pattern that is formed on the first hard mask layer of the base material, and the first and second fine patterns are formed by etching the base material by using the first hard mask pattern as a mask.

主权项

1. A method for producing a nanoimprint mold in which a first fine pattern and a second fine pattern which is larger in size than the first fine pattern are formed on the same surface, the method comprising:
preparing a base material in which a first hard mask layer and a second hard mask layer are laminated in the order of description, and forming a first resist pattern on the second hard mask layer positioned in an upper layer of a first pattern region where the first fine pattern is to be formed in the base material; forming a sidewall pattern in a side wall of the first resist pattern; etching the second hard mask layer by using the sidewall pattern as a mask, and forming a second hard mask pattern; forming a second resist pattern on the first hard mask layer positioned in an upper layer of a second pattern region where the second fine pattern is to be formed in the base material; etching the first hard mask layer by using the second hard mask pattern and the second resist pattern as a mask, and forming a first hard mask pattern; and etching the base material by using the first hard mask pattern as a mask, and forming the first fine pattern and the second fine pattern.