PATTERN FORMING METHOD, GAS CLUSTER ION BEAM IRRADIATION SYSTEM AND PATTERN FORMING APPARATUS

摘要

A mask pattern is formed on a substrate. A first spacer film is formed on the mask pattern. The first spacer film is etched by irradiating the substrate with a gas cluster ion beam (GCIB). A first spacer pattern is formed on the substrate by removing the mask pattern. A second spacer film is formed on the first spacer pattern. The second spacer film is etched. A second spacer pattern is formed on the substrate by removing the first spacer pattern. The substrate is etched using the second spacer pattern as a mask.