| 摘要 |
The present invention provides a NAND flash memory and a read method thereof. The NAND flash memory can read a negative threshold value of a memory cell without using a negative voltage generation circuit. According to the present invention, the NAND flash memory includes: a sense amplifier (172); a bit-line selection circuit (200); and an array having multiple string units (NU) of NAND strings. The NAND flash memory has an application means to apply a constant voltage to a source line (SL), a P-well (210) having the selected memory cell formed thereon, and bit-lines which are not selected and are adjacent to a selected bit-line for a predetermined period after pre-charging the selected bit-line in a read operation. |
