发明名称 ホウ素炭素膜をドライストリッピングする方法
摘要 Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.
申请公布号 JP5933694(B2) 申请公布日期 2016.06.15
申请号 JP20140510355 申请日期 2012.04.27
申请人 アプライド マテリアルズ インコーポレイテッドAPPLIED MATERIALS,INCORPORATED 发明人 リー, グァンドク ディー.;ラティ, スダ;サンカラクリッシュナン, ランプラカッシュ;シーモンズ, マーティン ジェー.;ジャミール, イルファン;キム, ボクホン
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
主权项
地址