METHOD OF PRODUCING EPITAXIAL LAYER OF BINARY SEMICONDUCTOR MATERIAL

摘要

The invention relates to the field of microelectronics and may be used for producing epitaxial structures of of III-V compound semiconductor materials and II-VI compound semiconductor materials by means of chemical vapour deposition of metal-organic compounds and hydrides. What is claimed is a method of producing an epitaxial layer of a binary semiconductor material on a monocrystalline substrate by means of metal-organic chemical vapour deposition (MOCVD). The technical result is improvement in quality of heteroepitaxial structures.