发明名称 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of simplifying the structure of the apparatus and preventing the deterioration of the plasma generation efficiency.SOLUTION: A plasma processing apparatus 10 includes: a chamber 11; a placement base 12 disposed in the chamber 11 and on which a substrate S is placed; an ICP antenna 13 which is disposed at the exterior of the chamber 11 so as to face the placement base 12 and is connected with a high frequency power source 26; and a window member 14 which is disposed between the placement base 12 and the ICP antenna 13 and is formed by a conductor. The window member 14 is divided into multiple split pieces 27. The multiple split pieces 27 are insulated from each other and connected with each other by a conducting wire 29 and a conducting wire 30 with a capacitor to form a closed circuit 31.
申请公布号 JP5934030(B2) 申请公布日期 2016.06.15
申请号 JP20120133680 申请日期 2012.06.13
申请人 東京エレクトロン株式会社 发明人 山澤 陽平;傳寳 一樹;木村 隆文;輿水 地塩;佐々木 和男;内藤 啓;古屋 敦城
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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