发明名称 SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 [Problem] To provide a semiconductor element that can be manufactured easily at a low cost, can obtain a high tunneling current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit including the semiconductor element. [Solution] A semiconductor element of the present invention is characterized in that the whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor containing isoelectronic-trap-forming impurities.
申请公布号 EP3032587(A1) 申请公布日期 2016.06.15
申请号 EP20140842700 申请日期 2014.07.30
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE 发明人 MORI, TAKAHIRO
分类号 H01L29/66;H01L21/336;H01L29/161;H01L29/167;H01L29/20;H01L29/47;H01L29/739;H01L29/78;H01L29/786;H01L29/872 主分类号 H01L29/66
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