发明名称 |
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
[Problem] To provide a semiconductor element that can be manufactured easily at a low cost, can obtain a high tunneling current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit including the semiconductor element. [Solution] A semiconductor element of the present invention is characterized in that the whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor containing isoelectronic-trap-forming impurities. |
申请公布号 |
EP3032587(A1) |
申请公布日期 |
2016.06.15 |
申请号 |
EP20140842700 |
申请日期 |
2014.07.30 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE |
发明人 |
MORI, TAKAHIRO |
分类号 |
H01L29/66;H01L21/336;H01L29/161;H01L29/167;H01L29/20;H01L29/47;H01L29/739;H01L29/78;H01L29/786;H01L29/872 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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