摘要 |
THE INVENTION RELATES TO A METHOD AND DEVICE FOR TREATING SILICON WAFERS. IN A FIRST STEP, THE SILICON WAFERS (22) ARE CONVEYED FLAT ALONG A CONTINUOUS, HORIZONTAL CONVEYOR BELT (12, 32) AND NOZZLES (20) OR THE LIKE SPRAY AN ETCHING SOLUTION (21) FROM THE TOP ONTO THE WAFERS TO TEXTURE THEM, ONLY LITTLE ETCHING SOLUTION (21) BEING APPLIED TO THE SILICON WAFERS (22) FROM BELOW. IN A SECOND STEP, THE SILICON WAFERS (22), WHICH ARE ALIGNED AS IN THE FIRST STEP, ARE WETTED EXCLUSIVELY FROM BELOW WITH THE ETCHING SOLUTION (35) TO ETCH-POLISH THEM. |