INTERCONNECT ARRANGEMENT WITH STRESS-REDUCING STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

Provided are embodiments of a semiconductor device structure and a method for manufacturing the same. The semiconductor device structure includes a substrate, and a first layer formed on the substrate. The semiconductor device structure further includes a stress reducing structure formed on the first layer, and a portion of the first layer is surrounded by the stress reducing structure. The semiconductor device structure further includes a conductive feature formed on the portion of the first layer surrounded by the stress reducing structure.