AN INTEGRATED CIRCUIT COMPRISING GROUP III-N TRANSISTORS MONOLITHICALLY INTEGRATED ON A SILICON SUBSTRATE AND A METHOD FOR MANUFACTURING THEREOF

摘要

An integrated circuit (1) comprising a first III-N transistor (5) having a source region (8) and a second III-N transistor (6) having a source region (9), both transistors being monolithically integrated on a common silicon substrate (2) of a first doping type and separated from each-other by an isolation region (7),the substrate (2) comprising underneath the first transistor (5) a well (3) of a first doping type electrically connected to the source region (8) of the first transistor (5) and comprising underneath the second transistor (6) a well (4) of a second doping type electrically connected to the source region (9) of the second transistor (6), thereby forming a junction diode (10) in the substrate (2) between the sources (8,9) of the first (5) and the second (6) transistor.