发明名称 |
PiN DIODE STRUCTURE HAVING SURFACE CHARGE SUPPRESSION |
摘要 |
A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes. |
申请公布号 |
EP3031082(A1) |
申请公布日期 |
2016.06.15 |
申请号 |
EP20140755190 |
申请日期 |
2014.07.24 |
申请人 |
RAYTHEON COMPANY |
发明人 |
DRAB, JOHN, J.;WEHNER, JUSTIN, GORDON ADAMS;BOEMLER, CHRISTIAN, M. |
分类号 |
H01L27/144;H01L27/146;H01L31/105 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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