SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A semiconductor light emitting device having a main emission wavelength equal to or greater than 520 nm, wherein the intensity of light having a wavelength shorter than the main emission wavelength is suppressed. This semiconductor light emitting device having a main emission wavelength equal to or greater than 520 nm is provided with: an n-type semiconductor layer; an active layer formed of a semiconductor that is formed on an upper layer of the n-type semiconductor layer; a p-type semiconductor layer formed on an upper layer of the active layer; and a light absorption layer formed between the n-type semiconductor layer and p-type semiconductor layer and formed of a semiconductor that absorbs light having at least any one wavelength included in a wavelength band from 400 nm to 440 nm.