发明名称 |
IMAGING APPARATUS AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus with excellent productivity and improved light reception sensitivity.SOLUTION: An imaging apparatus includes a pixel having a photoelectric conversion element, a transistor, and a capacitive element, and one of electrodes of the capacitive element is formed by using another portion of the same layer as the layer on which a semiconductor layer of the transistor is formed to reduce a formation process of the electrode of the capacitive element. Moreover, the capacitive element with light transmissivity can be realized by using an oxide semiconductor having light transmissivity in the semiconductor layer.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016105468(A) |
申请公布日期 |
2016.06.09 |
申请号 |
JP20150224534 |
申请日期 |
2015.11.17 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KOZUMA MUNEHIRO;UOJI HIDEKI |
分类号 |
H01L27/146;H01L21/822;H01L21/8234;H01L21/8238;H01L27/04;H01L27/06;H01L27/08;H01L27/092;H01L29/786;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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