An integrated electrostatic discharge (ESD) device (10) includes a first ESD structure (16) coupled to a pad terminal (12) of the integrated ESD device and a second ESD structure (18) coupled to a ground terminal (14) of the integrated ESD device. The integrated ESD device also comprises a diffusion region (20) that is shared by each of the first ESD structure and the second ESD structure, such that the shared diffusion region forms a portion of at least one semiconductor junction associated with each of the first ESD structure and the second ESD structure.
申请公布号
WO2008019332(A3)
申请公布日期
2016.06.09
申请号
WO2007US75246
申请日期
2007.08.06
申请人
TEXAS INSTRUMENTS INCORPORATED;MITCHELL, ANDREW, D.;CHEN, WAYNE, TIEN-FENG;CARPENTER, JOHN, H.
发明人
MITCHELL, ANDREW, D.;CHEN, WAYNE, TIEN-FENG;CARPENTER, JOHN, H.