| 摘要 |
A thin film transistor having low off-state current and excellent electrical characteristics can be manufactured. In an inverted staggered thin film transistor including a semiconductor film in which at least a microcrystalline semiconductor region and an amorphous semiconductor region are stacked, a conductive film and an etching protective film are stacked over the semiconductor film; a mask is formed over the etching protective film; first etching treatment in which the etching protective film, the conductive film, and the amorphous semiconductor region are partly etched is performed; then, the mask is removed. Next, second etching treatment in which the exposed amorphous semiconductor region and the microcrystalline semiconductor region are partly dry-etched is performed using the etched etching protective film as a mask so that the microcrystalline semiconductor region is partly exposed to form a back channel region. |
