| 摘要 |
A method for fabricating a semiconductor device, comprising:
a. Providing a structure comprising a first sacrificial layer (2) comprising at least one through-hole exposing a metal (4) surface and optionally an oxide (5) surface,
b. Applying a self-assembled monolayer (10) selectively on the exposed metal (4) surface and/or on the oxide (5) surface,
c. Growing a metal (9) on the self-assembled monolayer (10) and on the exposed metal (4) surface if no self-assembled monolayer (10) is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal (9) structure,
d. Replacing the first sacrificial layer (2) by a replacement dielectric layer (11) having a dielectric constant of at most 3.9. |
