| 摘要 |
A deposition method is implemented in a focused ion beam system (100) that supplies a compound gas to a specimen (S), and applies an ion beam (IB) to the specimen (S) to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film (D1) on the specimen (S) using the ion beam (IB) that is defocused with respect to the specimen (S); and a second deposition film-depositing step that deposits a second deposition film (D2) on the first deposition film (D1) using the ion beam (IB) that is smaller in defocus amount than that used in the first deposition film-depositing step. |
