发明名称 |
PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
An image sensor as a photoelectric conversion device includes: a lower electrode containing a high-melting-point metal; an upper electrode disposed in a layer higher than the lower electrode; a p-type semiconductor layer and an n-type semiconductor layer disposed between the lower electrode and the upper electrode; and a relay electrode containing the high-melting-point metal. The lower electrode and the relay electrode are formed in the same layer. An intermediate layer as a selenized film of the high-melting-point metal is formed on the lower electrode. |
申请公布号 |
EP3029741(A1) |
申请公布日期 |
2016.06.08 |
申请号 |
EP20150197736 |
申请日期 |
2015.12.03 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KUDO, MANABU |
分类号 |
H01L31/0224;H01L25/04;H01L27/146;H01L31/032;H01L31/109 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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