| 摘要 |
The method involves forming an etching mask (8) that delineates an isolation area (5) and two active areas (1, 3) of a hybrid substrate. Layers (2, 4) of two semiconductor materials and an isolation layer (6) are structured to delineate the isolation area and one active area in one of the two semiconductor materials, to release a main surface of the active area to form void areas in the substrate. The mask is eliminated above the active area, and the void areas and the mask are filled by isolation material of the isolation area. The isolation material is leveled and etched to main surface. The semiconductor materials can be semiconductor-on-insulator type material. An independent claim is also included for a hybrid substrate comprising active layers. |
