| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal manufacturing method by using a horizontal magnetic field application Czochralski (HMCZ) method capable of suppressing a crystal from generating dislocation when growing a cone.SOLUTION: Provided is a silicon single crystal manufacturing method by using a HMCZ method, in which, while rotating crucibles 1a and 1b at 3 rpm or more, a temperature distribution of a melt surface is measured by a two-dimensional thermometer 15b before immersing a seed crystal 5 in silicon melt 3. During the measurement, a constant low temperature region whose melt surface temperature is constantly lower than the other region is specified, and when adjusting the melt surface temperature at the time of immersing the seed crystal 5 on the basis of the temperature measured by a radiation thermometer 15a, a temperature measuring point by using the radiation thermometer 15a is set within the constant low temperature region and then the seed crystal 5 is immersed in the constant low temperature region. By this method, the seeding temperature can be appropriately set, thereby suppressing the crystal from generating dislocation caused by faulty or inappropriate necking when growing a cone, compared to the conventional method, and improving productivity. |
