| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition, from which a pattern can be formed having high sensitivity, high resolution (for example, high resolving power, an excellent pattern profile and small line edge roughness (LER)), high stability with time, little production of scum and good dry etching durability, in particular, a chemically amplified resist composition, which shows a good balance between sensitivity and stability with time owing to an ester group included in an acid multiplication agent expressed by general formula (I), and which is excellent in improving sensitivity by generating a carboxylic acid when the acid multiplication agent is decomposed by an acid, and to provide a resist film, a resist coated mask blank, a method for forming a resist pattern and a photomask using the above composition.SOLUTION: The chemically amplified resist composition comprises (A) a compound expressed by general formula (I) and (B) a compound that generates an acid by irradiation with actinic rays or radiation. In general formula (I), Rto Reach represent a hydrogen atom or a substituent, and two or more in Rto Rmay be bonded to form a ring; Rrepresents a substituent; and A represents a monovalent organic group. |
