| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of reducing pattern dependency of light absorption rate of a substrate surface in irradiation of flash light, and a heat treatment method.SOLUTION: An upper flash lamp UFL is provided above a chamber 6 for housing a semiconductor wafer W, and a lower flash lamp LFL is provided below the chamber 6. Flash light from the lower flash lamp LFL is applied to a rear surface of the semiconductor wafer W to perform an auxiliary heating, then flash light from the upper flash lamp UFL is applied to a surface of the semiconductor wafer W to rise the surface temperature to a target temperature. The entire rear surface can be uniformly heated by applying flash light to the rear surface, because the in-plane distribution of light absorption rate of the rear surface of the semiconductor wafer W is uniform. The flash light application to the surface is influenced by a pattern, but in all heating steps in the apparatus, the pattern dependency of light absorption rate of the surface of the semiconductor wafer W in application of the flash light, can be reduced. |
