| 摘要 |
At a pressure sensor region, a pressure sensor including a fixed electrode, a vacuum chamber and a movable electrode is formed at a pressure sensor region, whereas a memory cell transistor and a field effect transistor are formed at a MOS region. An etching hole communicating with the vacuum chamber is sealed by a first sealing film and the like. The vacuum chamber is formed by removing a portion of a film identical to the film of a gate electrode of the memory cell transistor. |
