| 摘要 |
The present invention relates to a compound semiconductor substrate having a reduced dislocation (defect) density at an interface between a Si substrate and a compound semiconductor layer, and a method for producing the compound semiconductor substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate were removed by subjecting the Si substrate sequentially to organic washing, acid washing and alkaline washing, whereby a flat oxide film (not shown) was formed (S31). The oxide film on the surface was removed by using an aqueous hydrogen fluoride solution having a concentration of 1.0% by weight, whereby hydrogen termination treatment was performed (S32). The Si substrate immediately after being subjected to the hydrogen termination treatment was placed in a vacuum apparatus, and then the temperature of the Si substrate was raised in a vacuum apparatus (S33). If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen was released, pre-irradiation with As was performed (S34). Thus, an interface between the Si substrate and the compound semiconductor layer was prepared. Several minutes later, irradiation with Ga and As was performed (S35). Thereby, the compound semiconductor was formed (S36). |
