化合物半導体装置及びその製造方法,申请号JP20120015515-传众专利搜索

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发明名称	化合物半導体装置及びその製造方法
摘要
申请公布号	JP5932368(B2)	申请公布日期	2016.06.08
申请号	JP20120015515	申请日期	2012.01.27
申请人	トランスフォーム・ジャパン株式会社	发明人	宮本真人;温井健司;小谷義之
分类号	H01L21/338;H01L21/336;H01L29/423;H01L29/778;H01L29/78;H01L29/812	主分类号	H01L21/338
代理机构		代理人
主权项
地址

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