METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device with improved reliability on a product by removing the remaining part after cutting an active fin included in a Fin field effect transistor (FinFET). The method for manufacturing a semiconductor comprises the following steps of: forming first and second hard mask patterns adjacent to each other on a substrate; forming first and second active fins by etching the substrate exposed by the first and second hard mask patterns; forming an element separation layer to fill side surfaces of the first and second hard mask patterns and the first and second active fins; forming a mask pattern positioned on the first hard mask pattern, and overlapped with the first active fin; forming a first trench by etching a part of the element separation layer and a part of the second active fin by using the mask pattern as a mask; removing the remaining part of the second active fin by performing an isotropic etching process; and forming a second trench deeper than the first trench on the substrate by performing an anisotropic etching process.