A method for controlling a resistive memory device comprises the following steps of: accessing a pulse power specification satisfying memory cell coefficients of a plurality of memory cells included in a memory cell array; generating pulse power in accordance with the accessed pulse power specification; and performing write operations on the memory cells using the generated pulse power. Therefore, the method can suppress signal deterioration.
申请公布号
KR20160064901(A)
申请公布日期
2016.06.08
申请号
KR20140169181
申请日期
2014.11.28
申请人
SAMSUNG ELECTRONICS CO., LTD.;POSTECH ACADEMY-INDUSTRY FOUNDATION
发明人
CHANG, MAN;LEE, SANG HEON;BAEK, IN GYU;HWANG, HYUN SANG