| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element at least having a high F.F.SOLUTION: A photoelectric conversion element includes an intermediate buffer layer composed of a nitride semiconductor represented by a formula AlInGaN(0≤a<0.04, 0≤b≤0.1, 0<a+b≤1, b<y) and having a region in contact with a photoelectric conversion layer, where the In composition ratio (b) of the intermediate buffer layer increases in the thickness direction thereof toward the photoelectric conversion layer, has a maximum value in a region of 6% depth from the boundary surface of the intermediate buffer layer and photoelectric conversion layer, and is smaller than the Al composition ratio (a) in a region from a point having the maximum value to the boundary surface of the intermediate buffer layer and photoelectric conversion layer. |
