发明名称 真空成膜方法、及び該方法によって得られる積層体
摘要 A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
申请公布号 JP5930791(B2) 申请公布日期 2016.06.08
申请号 JP20120068801 申请日期 2012.03.26
申请人 日東電工株式会社 发明人 梨木 智剛;坂田 義昌;菅原 英男;家倉 健吉;濱田 明;伊藤 喜久;石橋 邦昭
分类号 C23C14/56;B32B15/04 主分类号 C23C14/56
代理机构 代理人
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