发明名称 |
SPLIT GATE NON-VOLATILE FLASH MEMORY CELL HAVING A SILICON-METAL FLOATING GATE AND METHOD OF MAKING SAME |
摘要 |
A non-volatile memory cell includes a substrate of a first conductivity type with first and second spaced apart regions of a second conductivity type, forming a channel region therebetween. A select gate is insulated from and disposed over a first portion of the channel region which is adjacent to the first region. A floating gate is insulated from and disposed over a second portion of the channel region which is adjacent the second region. Metal material is formed in contact with the floating gate. A control gate is insulated from and disposed over the floating gate. An erase gate includes a first portion insulated from and disposed over the second region and is insulated from and disposed laterally adjacent to the floating gate, and a second portion insulated from and laterally adjacent to the control gate and partially extends over and vertically overlaps the floating gate. |
申请公布号 |
EP3028297(A1) |
申请公布日期 |
2016.06.08 |
申请号 |
EP20140756145 |
申请日期 |
2014.07.30 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
YOO, JONG-WON;KOTOV, ALEXANDER;TKACHEV, YURI;SU, CHIEN-SHENG |
分类号 |
H01L21/28;H01L27/115;H01L29/423;H01L29/66;H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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