Semiconductor Device Having a Positive Temperature Coefficient Structure

摘要

A semiconductor device includes a first load terminal at a first surface of a semiconductor body and a second load terminal at the opposing surface. An active device area is surrounded by an edge termination area. Load terminal contacts are absent in the edge termination area and are electrically connected to the semiconductor body in the active device area at the first surface. A positive temperature coefficient structure is between at least one of the first and second load terminals and a corresponding one of the first and second surfaces. Above a maximum operation temperature specified for the semiconductor device, a specific resistance of the positive temperature coefficient structure increases by at least two orders of magnitude within a temperature range of at most 50 K. A degree of area coverage of the positive temperature coefficient structure is greater in the edge termination area than in the active device area.

主权项

1. A semiconductor device, comprising:
a first load terminal at a first surface of a semiconductor body; a second load terminal at a second surface of the semiconductor body opposite to the first surface; an active device area surrounded by an edge termination area, wherein load terminal contacts are electrically connected to the semiconductor body in the active device area at the first surface; and a positive temperature coefficient structure between at least one of the first and second load terminals and a corresponding one of the first and second surfaces, wherein a degree of area coverage with the positive temperature coefficient structure is greater in the edge termination area than in the active device area, and wherein above a maximum operation temperature specified for the semiconductor device a specific resistance of the positive temperature coefficient structure increases by at least two orders of magnitude within a temperature range of at most 50 K.