| 发明名称 |
STACK TYPE SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A stack type memory device and a method of manufacturing the same are provided. The stack type memory device includes a semiconductor substrate, a plurality of active layers stacked on the semiconductor substrate, and a gate structure overlapping the plurality of active layers. The gate structure includes a side gate region overlapping sides of the plurality of active layers and a top gate region overlapping a top of an uppermost active layer. |
| 申请公布号 |
US2016155779(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
US201615006782 |
申请日期 |
2016.01.26 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Nam Kyun |
| 分类号 |
H01L27/24;H01L43/08;H01L21/8234;H01L29/423;H01L43/12;H01L43/02;H01L27/22;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A stack type memory device, comprising
a semiconductor substrate; a plurality of active layers stacked on the semiconductor substrate; and a gate structure overlapping the plurality of active layers, wherein the gate structure includes a side gate region overlapping sides of the plurality of active layers and a top gate region overlapping a top of an uppermost active layer. |
| 地址 |
Gyeonggi-do KR |
