发明名称 PROXIMITY COUPLING OF INTERCONNECT PACKAGING SYSTEMS AND METHODS
摘要 Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.
申请公布号 US2016155729(A1) 申请公布日期 2016.06.02
申请号 US201414556450 申请日期 2014.12.01
申请人 Micron Technology, Inc. 发明人 Fogal Rich;Fay Owen R.
分类号 H01L25/18;H01L25/065;H01L23/31;H01L23/42;H01L23/48;H01L23/522;H01L25/00;H01L21/56;H01L23/00;H01L23/367 主分类号 H01L25/18
代理机构 代理人
主权项 1. A semiconductor package assembly comprising: a substrate having bond pads; a first semiconductor die disposed adjacent the substrate, the first semiconductor die having a first coupling face that faces away from the substrate; a second semiconductor die having a second coupling face and bond pads at the second coupling face, the second semiconductor die stacked on the first semiconductor die such that the second coupling face faces the first coupling face; a proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face and a second conductive pad on the second coupling face spaced from the first conductive pad by a gap distance and aligned with the first conductive pad; and an electrical connector positioned laterally apart from the proximity coupling interconnect and extending between one of the bond pads of the second semiconductor die and one of the bond pads of the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad, wherein the first coupling face has a first passivation layer extending beyond a height of the first conductive pad and having a first opening exposing the first conductive pad, wherein the second coupling face has a second passivation layer extending beyond a height of the second conductive pad and having a second opening exposing the second conductive pad, and wherein the first and second passivation layers define the gap distance between the first conductive pad and the second conductive pad.
地址 Boise ID US