PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method of a package structure includes the following steps. A substrate including a core layer, first and second patterned metal layers is provided. The first and second patterned metal layers are respectively disposed on two opposite surfaces of the core layer. A through cavity penetrating the substrate is formed. The substrate is disposed on a tape carrier. A semiconductor component is disposed in the through cavity. An inner wall of the through cavity and a side surface of the semiconductor component define a groove. The filling compound is dispensed above the groove. A heating process is performed for the filling compound to flow toward the tape carrier and comprehensively fill the groove. First and second stacked layers are respectively laminated onto the first and second patterned metal layers and cover at least a part of the semiconductor component.

主权项

1. A manufacturing method of a package structure, comprising:
providing a substrate, the substrate includes a core layer, a first patterned metal layer and a second patterned metal layer, and the first patterned metal layer and the second patterned metal layer respectively disposed on two opposite surfaces of the core layer; forming a through cavity penetrating the substrate; disposing the substrate on a tape carrier; disposing a semiconductor component in the through cavity and positioned on the tape carrier, and an inner wall of the through cavity and a side surface of the semiconductor device jointly defining a groove; dispensing a filling compound above the groove; performing a heating process for the filling compound to flow toward the tape carrier and comprehensively filling the groove; laminating a first stacked layer onto the substrate towards the first patterned metal layer, and the first stacked layer covering at least a part of the semiconductor component; removing the tape carrier; and laminating a second stacked layer onto the substrate towards the second patterned metal layer, and the second stacked layer covering at least a part of the semiconductor component.