| 发明名称 |
HARD MASK REMOVAL SCHEME |
| 摘要 |
A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal. Using chemical including acidic chemical for hard mask layer removal is cheaper and the resource can be easily generated by equipment. Thus the chemical for hard mask layer removal can be drained directly and need not be recycled. |
| 申请公布号 |
US2016155646(A1) |
申请公布日期 |
2016.06.02 |
| 申请号 |
US201615018713 |
申请日期 |
2016.02.08 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANGCHIEN Ying-Hsueh;LEE Yu-Ming;YANG Chi-Ming |
| 分类号 |
H01L21/311;H01L21/67;H01L21/3213;H01L21/033 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chamber for hard mask removal, comprising:
a chamber comprising an outlet, wherein a wafer is placed in the chamber; and at least one pipe configured for providing an acidic chemical dispensing on the wafer for removing a hard mask layer of the wafer, wherein the outlet is not conducted to the pipe, and the acidic chemical is drained from the chamber after hard mask removal. |
| 地址 |
HSINCHU TW |
