OPTICAL PROXIMITY CORRECTION TAKING INTO ACCOUNT WAFER TOPOGRAPHY

摘要

A method of manufacturing semiconductor devices employing optical proximity correction (OPC) is provided including providing a design layout of masks, performing OPC on the design layout to obtain a post OPC layout, performing post chemical mechanical polishing (CMP) topography simulations of a wafer to obtain the surface topography of the wafer, calculating a focus shift of a nominal focus caused by the surface topography of the wafer to obtain a shifted nominal focus, determining a process window based on the shifted nominal focus, simulating a nominal image based on the post OPC layout and the shifted nominal focus and process window images based on the post OPC layout and the process window, and identifying hotspots based on the simulated nominal and process window images.

主权项

1. A method of manufacturing of semiconductor devices employing optical proximity correction (OPC), comprising:
providing a design layout of masks; performing OPC on said design layout to obtain a post OPC layout; performing post chemical mechanical polishing (CMP) topography simulations of a wafer to obtain a surface topography of said wafer; calculating a focus shift of a nominal focus caused by said surface topography of said wafer to obtain a shifted nominal focus; determining a process window based on said shifted nominal focus; simulating a nominal image based on said post OPC layout and said shifted nominal focus and process window images based on said post OPC layout and said process window; and identifying hotspots based on said simulated nominal and process window images.