发明名称 MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 PROBLEM TO BE SOLVED: To provide a multiple charged particle beam lithography apparatus capable of correcting positional displacement and dimensional displacement of a pattern formed by being irradiated with multiple beams containing a positionally-displaced beam.SOLUTION: A multiple charged particle beam lithography apparatus 100 includes: a weighting coefficient calculation unit 54 for calculating a plurality of weighting coefficients that assign weights to doses of a plurality of different beams used for multiple pattern drawing for each pixel of pixels, each pixel being used as an irradiation unit region per beam of multiple charged particle beams; an irradiation dose calculation unit 55 for calculating doses of the plurality of different beams weighted by using a corresponding weighting coefficient among the plurality of weighting coefficients for each of the pixels; and a drawing unit 150 for drawing a pattern on a sample using the multiple charged particle beams such that corresponding pixels are irradiated with the plurality of different beams of the doses weighted respectively.SELECTED DRAWING: Figure 1
申请公布号 JP2016103557(A) 申请公布日期 2016.06.02
申请号 JP20140240857 申请日期 2014.11.28
申请人 NUFLARE TECHNOLOGY INC 发明人 KAWANA RYO;KATO YASUO
分类号 H01L21/027 主分类号 H01L21/027
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