| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having good heat dissipation properties, and a method of manufacturing the semiconductor device.SOLUTION: A semiconductor device 1 includes a metal layer 3 provided on a support substrate 2, a semiconductor laminate 4 provided on the metal layer 3, and an electrode 5 provided on the semiconductor laminate 4. The metal layer 3 is in contact with the support substrate 2 and the semiconductor laminate 4 and contains at least one of tungsten, molybdenum, and tantalum. The thickness of the metal layer 3 is 10-60 nm.SELECTED DRAWING: Figure 2 |
