PILLAR-SHAPED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

An opening extending through a gate insulating layer and a gate conductor layer is formed in the circumferential portion of a Si pillar at an intermediate height of the Si pillar. A laminated structure including two sets each including a Ni film, a poly-Si layer containing donor or acceptor impurity atoms, and a SiO2 layer is formed so as to surround the opening. A heat treatment is carried out to form silicide from the poly-Si layers and this silicide formation causes the resultant NiSi layers to protrude and come into contact with the side surface of the Si pillar. The donor or acceptor impurity atoms diffuse from the NiSi layers into the Si pillar to thereby form an N+ region and a P+ region serving as a source or a drain of SGTs.

主权项

1. A pillar-shaped semiconductor device comprising:
a semiconductor pillar that stands on a semiconductor substrate so as to be perpendicular to a surface of the semiconductor substrate; an impurity region formed within the semiconductor pillar and containing donor or acceptor atoms; an alloy layer formed so as to be in contact with a side surface of the impurity region, within the semiconductor pillar and around the semiconductor pillar; and two interlayer insulating layers sandwiching the alloy layer, wherein at least one of the two interlayer insulating layers is separated from a side surface of the semiconductor pillar, the alloy layer contains metal atoms and semiconductor atoms, and the metal atoms react with the semiconductor atoms upon heat treatment to form the alloy layer and, during formation of the alloy layer, the donor or acceptor atoms are pushed out from the alloy layer.